Diode lasers have emerged as a sustainable and efficient solution for wafer heating, providing chip makers an opportunity to optimize their production. Like infrared lamp heaters, laser heaters utilize infrared light – however, laser heaters offer significant advantages by reaching target temperatures faster, providing excellent uniformity, reducing energy consumption, and wasting virtually no energy heating the surrounding chamber or atmosphere.

Experiments with a 975 nm wavelength diode laser have demonstrated the capability to heat a 200 mm silicon wafer to 800° C in under 9 seconds while maintaining steady temperatures throughout the heating process. The study's empirical model suggests that this technology can be effectively scaled to larger 300 mm wafers, presenting a compelling case for diode laser heating as a wafer heating solution.

To learn more about how diode lasers are the ideal solution for wafer heating, click here to read the full article from Silicon Semiconductor magazine.