In this video, IPG Photonics demonstrates a wafer heating concept based on near-infrared (NIR) laser illumination of 200 mm silicon (Si) wafers. Our findings suggest that using a laser solution for wafer heating offers attractive energy and cycle time savings.

Beyond the energy savings inherent to laser heating, additional efficiency is realized via the laser equipment used in the demonstration. IPG DLS-ECO near-IR diode lasers provide at least 55% power conversion efficiency from electricity to projected light. A projected laser beam may be shaped to minimize energy overspill outside of the wafer perimeter, minimizing energy otherwise wasted heating the chamber atmosphere and walls.

Additionally, laser energy is delivered over a lengthy (up to 50 m) fiber that enables the heat source to remain outside the cleanroom. Since no considerable heat is generated near the process, except on the targeted wafer surface, laser heaters place a significantly reduced load on cleanroom utilities.

To learn more about a multi-zone spot heating concept for silicon wafers, you can view an animated representation of the process here.

To learn more from a laser heating expert, please contact us.